Electronic Devices & Circuits - GATE practice papers - Electronics & Communication for Q. 497

Q.  Consider the assertions S1,S2,S3 & S4

S1 : SiO2  acts as an isolation layer between the junctions in IC fabrication process
S2 : SiO2  acts as an isolation equipment/ material  between the  different devices
S3: SiO2   acts as a passivation layer by preventing undesired impurities over the silicon surface.
S4 : SiO2  acts  as a di-electric between poly-silicon gate and the channel of semiconductor

Which among them is/ are precise functions of silicon dioxide in an ion implantation  process?(Marks : 01)
- Published on 19 Oct 15

a. S1: Correct, S2: Correct, S3:Correct , S4: Correct
b. S1: Correct, S2: Incorrect, S3: Correct , S4 : Correct
c. S1: Correct, S2: Correct, S3 :Incorrect , S4 : Correct
d. S1: Correct, S2: Correct, S3 : Correct, S4 : Incorrect

ANSWER: S1: Correct, S2: Correct, S3:Correct , S4: Correct
 
SiO2 performs the major functions associated with an ion implantation process in IC fabrication process. It serves to be a dielectric, isolation as well as passivation layer depending upon the type of application.
It also allows the precise doping level of windows between SiO2 with greater proficiency at ion implantation process.

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