MOSFET - Breakdown enhancement due to parasitic BJT action

Q.  Which type of breakdown effect gets enhanced due to parasitic BJT action along with increase in drain current solely by the reduction in size of MOSFET?
- Published on 23 Sep 15

a. Near-avalanche breakdown
b. Snapback breakdown
c. Both a and b
d. None of the above

ANSWER: Both a and b

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    Discussion

  • Satyawati   -Posted on 05 Oct 15
    In MOSFETs, the second order effects causes the phenomenon of 'Near-avalanche' breakdown. This type of breakdown is also regarded as 'Snap-back breakdown'.

    Reduction in size of MOSFET and the corresponding increase in the drain current ultimately give rise to the occurrence of parasitic BJT action. This parasitic action increases the intensity of breakdown effect. Increased level of snap-back breakdown also leads to the device failure.

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