Numerical- Transconductance of N-channel E-MOSFET

Q.  What should be the value of transconductance, if N-channel E-MOSFET is biased in saturation region with the conduction parameter (k) = 0.836 mA/ V2 and drain current (ID) = 1.5 mA?
- Published on 23 Sep 15

a. 1 mA/V
b. 1.5 mA/V
c. 2.23 mA/V
d. 4.23 mA/V

ANSWER: 2.23 mA/V

Related Content

 

    Discussion

  • Satyawati Patil   -Posted on 07 Oct 15
    Given data: For N-channel E-mOSFET biased in saturation region,
    Conduction parameter (k) = 0.836 mA/ V2,
    Drain current (ID)= 1.5 mA

    To determine: Transconductance of N-channel E-MOSFET (gm)

    Formula: gm= 2√(k x IDQ)

    Method of computation: Since the N-channel E-MOSFET is biased in saturation region, the value of transconductance is expressed by,

    gm = 2√k x IDQ

    = 2 √ (0.836 x10-3 x 1.5 x 10-3)

    = 2 √ (1.254 x 10-6)

    = 2 x 1.1198 x10-3

    = 2.2396 x 10-3

    = 2.23 mA/V

    Therefore, transconductance value for the given parameters of N-channel E-MOSFET is computed to be 2.23 mA/V

➨ Post your comment / Share knowledge


Enter the code shown above:

(Note: If you cannot read the numbers in the above image, reload the page to generate a new one.)
▲