What is breakdown voltage in power transistor?

Q.  The breakdown voltage VCEV or VCEX in power transistor is the maximum voltage between collector and emitter with _________
- Published on 23 Sep 15

a. Open circuited collector
b. Open circuited base
c. Base to emitter voltage that is adjusted to a specific negative value
d. Base to emitter voltage that is adjusted to a specific positive value

ANSWER: Base to emitter voltage that is adjusted to a specific negative value

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    Discussion

  • Satyawati   -Posted on 05 Oct 15
    Basically, breakdown voltage is the maximum voltage present between two terminals of transistor especially when the third terminal is open,short or biased in forward or reverse direction. In power BJT, various breakdown voltages are generated like VEBO, VCEV or VCEX and VCO(SUS) .

    VEBO represents the maximum voltage between the emitter and base when the collector is open circuited. VCO(SUS)
    specifies the maximum voltage that the transistor can tolerate from collector to emitter with the open-circuited base. It is usually specified at maximum level of collector current in addition to the specified value of load inductance.

    But,the maximum voltage present between collector & emitter especially when the base to emitter voltage is adjusted to a specific negative value, can be termed as VCEV or VCEX .

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