What is near-avalanche breakdown?

Q.  Near-avalanche breakdown in MOSFET is an ultimate outcome of _________
- Published on 23 Sep 15

a. First order effects
b. Second order effects
c. Third order effects
d. None of the above

ANSWER: Second order effects

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    Discussion

  • Satyawati   -Posted on 05 Oct 15
    The second-order effects within MOSFET give rise to the phenomenon of 'Near-avalanche breakdown'.

    Due to reduction in the size of MOSFET, there is a possibility of a parasitic BJT action because of increased level of drain voltage. This parasitic action results in enhancement of the breakdown effect.

    Increase in an electric field of SiO2 layer also increases the breakdown effect resulting into the device failure.
    This breakdown effect can be avoided in the oxide layer by restricting the value of gate voltage to about 10V.

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