1) What is/ are the necessity /ies of using a vertical structure in Power BJTs?
a. Increase in cross-sectional area to allow the flow of device current
b. Reduction in on-state power dissipation of transistor
c. Reduction in thermal resistance to keep the problem of power dissipation under control
d. All of the above
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Answer
Explanation
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ANSWER: All of the above
Explanation:
No explanation is available for this question!
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2) The n_region in a vertical cross-section of a typical n-p-n bipolar power transistor is also known as _________
a. Emitter drift region
b. Base drift region
c. Collector drift region
d. None of the above
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Answer
Explanation
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ANSWER: Collector drift region
Explanation:
No explanation is available for this question!
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3) Which is/are the major drawback/s of including an additional n__drift layer in a typical n-p-n bipolar power transistor?
a. Increase in on-state device resistance by increasing on-state power loss
b. Increase in on-state device resistance by decreasing on-state power loss
c. Increase in on-state device resistance by completely stabilizing the level of on-state power loss
d. All of the above
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Answer
Explanation
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ANSWER: Increase in on-state device resistance by increasing on-state power loss
Explanation:
No explanation is available for this question!
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4) On which factor does the current gain (β) of power transistor depend?
a. Thickness of emitter
b. Thickness of base
c. Thickness of collector
d. All of the above
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Answer
Explanation
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ANSWER: Thickness of base
Explanation:
No explanation is available for this question!
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5) What does an arrow indicate in the below drawn schematic of V-I characteristics of n-p-n power transistor?
a. Primary breakdown
b. Second breakdown
c. Quasi saturation
d. Active region
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Answer
Explanation
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ANSWER: Quasi saturation
Explanation:
No explanation is available for this question!
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6) The breakdown voltage VCEV or VCEX in power transistor is the maximum voltage between collector and emitter with _________
a. Open circuited collector
b. Open circuited base
c. Base to emitter voltage that is adjusted to a specific negative value
d. Base to emitter voltage that is adjusted to a specific positive value
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Answer
Explanation
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ANSWER: Base to emitter voltage that is adjusted to a specific negative value
Explanation:
No explanation is available for this question!
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7) Which among the below stated parameters gets affected due to drift region in the power transistor?
a. Breakdown voltage
b. On-state losses
c. Switching time
d. All of the above
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Answer
Explanation
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ANSWER: All of the above
Explanation:
No explanation is available for this question!
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8) Which types of power transistors have the capability to withstand the higher junction temperatures?
a. Silicon power transistors
b. Germanium power transistors
c. Both a and b
d. None of the above
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Answer
Explanation
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ANSWER: Silicon power transistors
Explanation:
No explanation is available for this question!
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9) Which among the below mentioned reasons is/are responsible for the occurrence of second breakdown phenomenon in power BJT?
a. Large current
b. Distribution of current in a non-uniform manner
c. Excessive power dissipation
d. All of the above
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Answer
Explanation
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ANSWER: All of the above
Explanation:
No explanation is available for this question!
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10) What is the significance of adopting an interdigitated structure of power transistors?
a. Prevention of current crowding
b. Maintenance of reasonable current densities
c. Both a and b
d. None of the above
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Answer
Explanation
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ANSWER: Both a and b
Explanation:
No explanation is available for this question!
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